| PART |
Description |
Maker |
| ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| CPH3307 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
|
SANYO[Sanyo Semicon Device]
|
| CPH3355 CPH3355TL |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
Sanyo Semicon Device
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SK3925-01 |
XTAL CER SMT 6X3.5 2PAD 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SK3588-01L 2SK3588-01S 2SK3588-01SJ |
N-CHANNEL SILICON POWER MOSFET 73 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SCH2807 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5801 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
