PART |
Description |
Maker |
Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS) From old datasheet system GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
ITT2206GJ |
3.6V 0.5W RF Power Amplifier IC for DECT
|
M/A-COM / Tyco Electronics
|
MAAPSS0107TR-3000 MAAPSS0107SMB MAAPSS0107 |
3.6 V, 0.5 W, RF Power Amplifier IC for DECT 1800 - 2000 MHz
|
Tyco Electronics
|
CGY2032BTS CGY2032BTS_2 |
DECT 500 mW power amplifier From old datasheet system
|
Philips
|
XD010-22S-D2F |
1805-1880 MHz Class A/AB 12W Power Amplifier Module
|
Sirenza Microdevices, Inc. SIRENZA[SIRENZA MICRODEVICES]
|
PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
UAA3545 UAA3545HL UAA3545HL/C1 |
UAA3545; Fully integrated DECT transceiver Fully integrated DECT transceiver TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP32
|
Philips NXP Semiconductors N.V.
|
PXAC182908FV-V1 |
High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
PTFA181001GL09 |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz
|
Infineon Technologies AG
|