| PART |
Description |
Maker |
| RA18H1213G RA18H1213G-01 |
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO 1.24 - 1.30GHz 18W 12.5V阶段制造。对于移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CHA5296 CHA529607 |
27-30GHz High Power Amplifier
|
United Monolithic Semiconductors
|
| KA22296 |
Playback / Recoder Pre Amplifie for Double Deck
|
SEC
|
| CHX2095 |
7.5-30GHz Frequency Multiplier
|
United Monolithic Semiconductors
|
| CHR2295-99F CHR2295-99F00 |
24-30GHz Integrated Down Converter
|
United Monolithic Semiconductors
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| CHA2693-QAG |
18-30GHz Low Noise Amplifier
|
United Monolithic Semiconductors
|
| CHA2093-15 |
20-30GHz Low Noise Amplifier
|
United Monolithic Semic...
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
