| PART |
Description |
Maker |
| STK20C04 STK20C04-W25 STK20C04-W25I STK20C04-W35 S |
512 X 8 NON-VOLATILE SRAM, 35 ns, PDIP28
512 X 8 NON-VOLATILE SRAM, 45 ns, PDIP28
512 x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
512 x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
512 X 8 NON-VOLATILE SRAM, 25 ns, PDIP28
|
Simtek Corporation
|
| CY7C1020CV33-15ZSXE |
512 K (32 K 16) Static RAM
|
Cypress
|
| CY7C1049DV33-10VXI CY7C1049DV33-10VXIT CY7C1049DV3 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62148EV30LL-45BVI CY62148EV30LL-45BVIT CY62148EV |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY7C1062DV33-10BGIT CY7C1062DV33-10BGXI CY7C1062DV |
16-Mbit (512 K 32) Static RAM
|
Cypress
|
| CY7C1049CV33-12ZSXA CY7C1049CV33-12ZSXAT CY7C1049C |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY7C1012AV33-8BGC |
512 K × 24 Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| CY62157ELL-45ZSXI CY62157ELL-55BVXE |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY7C1049DV33 CY7C1049DV33-10ZSXI CY7C1049DV33-12VX |
4-Mbit (512 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| IDT70T633S12BCI IDT70T633S8DD IDT70T631S8DD IDT70T |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
