| PART |
Description |
Maker |
| MRFG35010R1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35003N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| D5006-24 D5006-36 DVF4559-04 |
60 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
130 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
|
SKYWORKS SOLUTIONS INC
|
| GN01025 |
Gallium Arsenide Devices
|
Panasonic
|
| GN04054N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01068B |
Gallium Arsenide Devices
|
Panasonic
|
| GN04073N |
Gallium Arsenide Devices
|
Panasonic
|
