PART |
Description |
Maker |
UPB417C UPB417D |
8192 BIT BIPOLAR TTL
|
NEC
|
82S131 |
2K-bit TTL bipolar PROM
|
Philips
|
UPB412 UPB412C UPB412D |
2048 BIT BIPOLAR TTL
|
NEC
|
N82LS135 |
2J-Bit TTL Bipolar PROM
|
Philips Semiconductors
|
MB7117E MB7117H MB7118E MB7118H |
Schottky TTL 2048-Bit Bipolar Programmable Read-Only Memory
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
24C44 CAT24C44 CAT24C44SITE13 CAT24C44PITE13 CAT24 |
256-Bit Serial Nonvolatile CMOS Static RAM 256-BitSerialNonvolatileCMOSStaticRAM
|
CATALYST[Catalyst Semiconductor] CatalystSemiconductor
|
CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22 256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22 From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches 256 x 256 Time Slot Interchange Digital Switch, 5.0V 256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology IDT
|