| PART |
Description |
Maker |
| IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| GFC034 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| FCX1151A |
2W power dissipation, Extremely low saturation voltage E.g. 60mv Typ.
|
TY Semiconductor Co., Ltd
|
| FCX717 |
2W power dissipation, Extremely low saturation voltage E.g. 12mv Typ
|
TY Semiconductor Co., Ltd
|
| AP2R803GH-HF14 |
Low On-resistance
Low On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| EL5132 EL5132IS-T7 EL5132IS EL5133IW-T7A EL5132IS- |
Rheostat; Series:RLS; Power Rating:150W; Resistance Max:25ohm; Terminal Type:Lugs; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Number of Turns:1; Resistance:25ohm
670MHZ LOW NOISE AMPLIFIERS
|
INTERSIL[Intersil Corporation]
|
| SP3481 SP3485 SP3485CN SP3485CP SP3485EN SP3485EP |
3.3V Low Power Half-Duplex RS-485 Transceivers with 10Mbps Data Rate
Cermet Potentiometer; Resistance Max:10kohm; Resistance Tolerance: /- 10 %; Power Rating:1W; Voltage Rating:350V; Series:149; Temperature Coefficient: /-150 ppm; Resistor Element Material:Cermet; Leaded Process Compatible:Yes
|
SIPEX[Sipex Corporation]
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| 2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
|
FUJI[Fuji Electric]
|
| HT9274 9274 |
Power Resistor; Series:TGH; Resistance:5kohm; Resistance Tolerance: /- 5 %; Power Rating:200W; Mounting Type:Chasis/Heat-Sink; Packaging:Bulk
Quad Micropower Op Amp
From old datasheet system
|
Holtek Semiconductor Inc.
|
| 2SK3652 |
Low on-resistance, low Qg High avalanche resistance For high-speed switching
|
TY Semiconductor Co., Ltd
|
