| PART |
Description |
Maker |
| RJK03P6DPA RJK03P6DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| MP4207 |
N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, H - SWITCH DRIVER)
|
TOSHIBA[Toshiba Semiconductor]
|
| HAT2108R |
Silicon N Channel Power MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
| HAT2052T |
Silicon N Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| HAT1025R-EL-E HAT1025R |
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HAT1065R-EL-E HAT1065R |
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HAT2026R HAT2026R-EL-E |
Silicon N Channel Power MOS FET High Speed Power Switching
|
http://
Renesas Electronics Corporation
|
