| PART |
Description |
Maker |
| K7R643684M K7R641884M |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1392BV18-278BZXC CY7C1392BV18-278BZC CY7C1392B |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.5 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 8 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 8 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K7J323682M K7J321882M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1423BV18-200BZI CY7C1423BV18-300BZI CY7C1429BV |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1394JV18-300BZC CY7C1394JV18-300BZI CY7C1394JV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1523V18-200BZCES CY7C1523V18-250BZCES CY7C1523 |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress
|
| CY7C1529AV18 CY7C1529AV18-167BZC CY7C1522AV18 CY7C |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
