| PART |
Description |
Maker |
| Q68000-A8370 CGY50 CGY50E6327 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 Ω gain block)
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 ヘ gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
Broadband MMIC Amplifier
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon
|
| PE9887-11 |
Broadband Gain Horn Antenna Operating From 1 GHz to 18 GHz With a Nominal 0 dB Gain With SMA Female Input Connector
|
Pasternack Enterprises,...
|
| RF2302 RF2302PCBA-H RF2302PCBA-L |
BROADBAND LINEAR VARIABLE GAIN AMPLIFIER 宽带线性可变增益放大器
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
http://
|
| RA55H4047M RA55H4047M-101 RA55H4047M11 |
RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA55H3340M RA55H3340M11 RA55H3340M-101 |
RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| 313E HMC313 HMC313E HMC31309 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz
|
Hittite Microwave Corporation
|
| BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75
|
Infineon Technologies AG
|
| KC846S |
For AF input stage and driver applications, High current gain.
|
TY Semiconductor Co., Ltd
|
| MGF0912A MGF0912A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0913A MGF0913A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0918A MGF0918A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
