| PART |
Description |
Maker |
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBRN113E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS4520X PBSS4520X-15 |
20 V, 5 A NPN low VCEsat (BISS) transistor 20伏，5安NPN型低饱和压降（BISS）晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| PBSS4021NT |
20 V, 4.3 A NPN low VCEsat (BISS) transistor
20 V, 4.3 A NPN low V_CEsat (BISS) transistor 4300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| FJP5027R FJP5027RTU FJP5027OTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4032NZ |
30 V, 4.9 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4630PA |
30 V, 6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
|
