| PART |
Description |
Maker |
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RURG15120C RURG15120CC FN3695 |
From old datasheet system
15A, 1200V Ultrafast Dual Diode
15A 1200V Ultrafast Dual Diode
15A/ 1200V Ultrafast Dual Diode
|
INTERSIL[Intersil Corporation]
|
| FGA15N120ANTDTU |
1200V, 15A, NPT Trench IGBT
|
Fairchild Semiconductor
|
| 6MBI15S-120 |
IGBT MODULE ( S series)1200V / 15A
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| Q67040-S4521 IGW60T120 |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
|
INFINEON[Infineon Technologies AG]
|
| 7MBR15NF120 |
Converter diode bridge dynamic brake circuit
1200V/15A/PIM
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| IRG7T15FF12Z |
1200V 15A Fast IGBT 6-Pack module packaged in EZIRPACK 1 package
|
International Rectifier
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| APT8052BFLL APT8052SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 800V 15A 0.520 Ohm
|
Advanced Power Technology, Ltd.
|
