PART |
Description |
Maker |
SPB17N80C3 SPB17N80C307 |
CoolMOS庐 Power Transistor Features new revolutionary high voltage technology
|
Infineon Technologies AG
|
IPW50R250CP |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP12N50C3 SPP12N50C309 SPA12N50C3 SPI12N50C3 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N60CFD05 SPP20N60CFD |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
IPW60R250CP |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP16N50C3-09 SPI16N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies A...
|
SPP06N60C309 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG Infineon Technologies A...
|
SPP08N80C308 SPP08N80C3-08 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG Infineon Technologies A...
|
IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|