| PART |
Description |
Maker |
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KBPC2505NW KBPC2505NW1 KBPC2501NW KBPC2502NW KBPC2 |
High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| MBR15U60 |
High surge Forward current capability
|
Micro Commercial Compon...
|
| XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351P |
Hall Effect IC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LEAD FREE EXT TEMP A2982 20L SOIC
XC6383
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:50V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41; Current Rating:1A
50V 1A 1N4001 (DO-41)
|
TOREX[Torex Semiconductor]
TOREX SEMICONDUCTOR LTD.
|
| S1M-F |
High forward surge capability
|
Sangdest Microelectroni...
|
| HF105F-4L277DK-1ZXXX HF105F-4 HF105F-4005DK-1DFXXX |
MINIATURE HIGH POWER RELAY 微型大功率继电器
SiBar Thyristor Surge Protectors; TVB140NSB-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB140NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB190NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB190NSB-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB180NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB170SA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB170NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB170NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB120NSB-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB120NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB090NSB-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB090NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB090NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB200SA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB170SC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB170NSB-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB120NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB190NSA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB180SA-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB140NSC-L ( Raychem )
SiBar Thyristor Surge Protectors; TVB075NSC-L ( Raychem )
|
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Xiamen Hongfa Electroacoustic Co., Ltd.
厦门宏发电声股份有限公司
HONGFA[Hongfa Technology]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| SR104-T SR104-B |
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
High Current Capability and Low Forward Drop
|
Diodes Incorporated
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
