| PART |
Description |
Maker |
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位（512 KB的16）SmartVoltage闪存
RES CURRENT SENSE .025 OHM 1W 1% 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
http://
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Compo...
|
| LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
Sharp Corporation
Sharp, Corp.
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
| LPC2387FBD100551 LPC2387FBD100 |
Single-chip 16-bit/32-bit MCU; 512 kB flash with ISP/IAP, Ethernet, USB 2.0 device/host/OTG, CAN, and 10-bit ADC/DAC
Single-chip 16-bit/32-bit microcontrollers; 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC; Package: SOT407-1 (LQFP100); Container: Tray Dry Pack, Bakeable, Single 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100
|
NXP Semiconductors N.V.
|
| TFBGA100 LPC2364HBD100 LPC2364FET100 LPC2364FBD100 |
ARM7 with 128 kB flash, 34 kB SRAM, Ethernet, USB 2.0 Device, CAN, and 10-bit ADC
ARM7 with 512 kB flash, 58 kB SRAM, Ethernet, USB 2.0 Device, CAN, SD/MMC, and 10-bit ADC
Single-chip 16-bit/32-bit microcontrollers; up to 512 kB flashnull
Single-chip 16-bit/32-bit ocontrollers; up to 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
Single-chip 16-bit/32-bit ocontrollers; up to 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
| HM658512AI |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
4 M PSRAM (512-kword ?8-bit)(4 M PSRAM (512k瀛??8浣?)
|
Hitachi,Ltd.
|
| M41T56C64MY6E |
512 bit (64 bit x8) Serial Access TIMEKEEPER SRAM 64 Kbit (8192 bit x8) EEPROM
|
ST Microelectronics
|
| LPC2377 LPC2377FBD144 LPC2378 LPC2378FBD144 |
Single-chip 16-bit/32-bit microcontroller; 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
| LPC2387FBD100 LPC2387 |
Single-chip 16-bit/32-bit microcontrollers; 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
