| PART |
Description |
Maker |
| G03H1202 |
High Speed 2-Technology
|
Infineon
|
| IGW50N65H5 PG-TO247-3 |
High speed 5 IGBT in TRENCHSTOP 5 technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| IGW15N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IGW25N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| EM78P447 EM78P447S EM78P447SA EM78P447SB |
8-bit microprocessor with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
|
| EM78P458 EM78P459 EM78P458AM EM78P459AM EM78P459AK |
8-bit microprocessors with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
EMC
|
| VSLY3850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| SIGC07T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient
|
Infineon Technologies AG
|
| EM78P153E EM78P153EN EM78P153EP |
EM78P153E is an 8-bit microprocessor with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
