| PART |
Description |
Maker |
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| HY5DU121622AT |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| HY5DU12822CFP HY5DU12822CLFP HY5DU12422C06 HY5DU12 |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| EBD52UC8AKDA-7B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52 |
512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| SDN06464E1C62MT-50 SDN06464E1C62MT-60 |
512MB DDR ?SDRAM SoDIMM
|
List of Unclassifed Manufac...
|
| HYMD264M646ALF8-H HYMD264M646ALF8-J HYMD264M646ALF |
DDR SDRAM - SO DIMM 512MB
|
Hynix Semiconductor
|
| K4H511638B-TC/LB3 |
DDR Sdram 512Mb B-die
|
Samsung Semiconductor
|
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| K4H511638G |
512Mb G-die DDR SDRAM Specification
|
Samsung semiconductor
|
| H5DU5162EFR |
(H5DU5162EFR / H5DU5182EFR) 512Mb DDR SDRAM
|
Hynix Semiconductor
|
