PART |
Description |
Maker |
LC378100QM LC378100QT |
8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system 1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd. Hitachi Semiconductor
|
HD404222 |
CMOS 4Bit Single-Chip MicroComputers
|
Hitachi Semiconductor
|
MH1M365CXJ-7 MH1M365CNXJ-5 MH1M365CNXJ-6 MH1M365CN |
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM 超页模式37748736位(1048576 - Word6位)动态随机存储器 From old datasheet system
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M44405CTP-6S M5M44405CJ-5S |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
28C64AT/P 28C64ATI/L 28C64AFTI/SO 28C64AFI/SO 28C6 |
64K (8K x 8) CMOS EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
Microchip Technology Inc. Microchip Technology, Inc.
|
KM44C4100C KM44C4000C KM44V4100C |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|