| PART |
Description |
Maker |
| PN202S PNZ202S |
Opto-Electronic Device - Photo Detectors - Phot Darlington Transistors
|
Panasonic
|
| PD075 PD075-003-100 PD075-003-105 PD075-003-5XX PD |
75μm InGaAs Photodiode
75レm InGaAs Photodiode
75?? InGaAs Photodiode
|
ANADIGICS[ANADIGICS, Inc]
|
| PD070 PD070-003-100 PD070-003-105 PD070-003-5XX PD |
70μm InGaAs Photodiode
70レm InGaAs Photodiode
70?? InGaAs Photodiode
|
ANADIGICS[ANADIGICS, Inc]
|
| PD-1500-S PD-1500-T PD-1500-FB PD-1500-SB PD-3500- |
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH RECEPTACLE 铟镓砷铟镓砷针放电模块PIN光电二极管与插座
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| PD-1181 |
InGaAs PIN PHOTODIODES 0.5 mm InGaAs PIN Photdiode with TO-46 Package
|
Optoway Technology Inc.
|
| PT-5530B-F PT-5530-F PT-5530-FB PT-5530-S PT-5530- |
3.3V / 622 Mbps InGaAs PIN-TIA Receiver InGaAs PIN-TIA WITH RECEPTACLE
|
Optoway Technology Inc
|
| PT-9302B-XS PT-9302B-XF PT-9302B-VSA PT-9332B-XF P |
3.3V / 2.5 Gbps InGaAs PIN-TIA Receiver InGaAs PIN-TIA WITH PIGTAIL
|
Optoway Technology Inc
http://
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| 13PD150-ST |
Modular Connector; No. of Contacts:8; Approval Categories:Fire-Retardant UL 94V-0 Rated; Body Material:Plastic; Color:Red; Contact Material:Phosphor Bronze; Contact Termination:Punchdown RoHS Compliant: Yes
The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ...
High Performance InGaAs p-i-n Photodiode
|
Anadigics Inc
ANADIGICS, Inc
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE 铟镓砷放电前置放大器模块.31毫米.55毫米波长范围
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
