| PART |
Description |
Maker |
| P9_430 2XP9_210 P9 2XP9/210 |
Heatsink For capsule devices
|
SEMIKRON[Semikron International]
|
| P17 P17_130 2XP17_130 2XP17_60 2XP17/60 P17/130 2X |
For capsule devices 对于胶囊设备
|
SEMIKRON[Semikron International]
|
| N4 2XN4/250F 2XN4/400F |
Heatsink For capsule devices
|
Semikron International
|
| AEV25012 AEV25024 AEV25112 AEV25124 AEV25312 AEV25 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 30A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 30A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
|
Matsushita Electric Works(Nais)
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MICROSMD175F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
