| PART |
Description |
Maker |
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| ISL9V5036S3S04 ISL9V5036S3S ISL9V5036P3 ISL9V5036S |
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
360V EcoSPARK 500mJ N-Channel Ignition IGBT
31A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| NGB8207ANT4G |
Ignition IGBT 20 A, 365 V, N−Channel D2PAK
Ignition IGBT 20 A, 365 V, N-Channel
|
ON SEMICONDUCTOR
|
| NGD8209NT4G |
Ignition IGBT
|
ON Semiconductor
|
| NGB8202NT4G NGB8202N_06 NGB8202N NGB8202NT4 NGB820 |
Ignition IGBT
|
ONSEMI[ON Semiconductor]
|
| NGB8206NTF4G |
Ignition IGBT
|
ON Semiconductor
|
| NGD8201NT4G NGD8201AN NGD8201ANT4G NGD8201N12 |
Ignition IGBT 20 A, 400 V, N.Channel DPAK
|
ON Semiconductor
|
| NGB8207NT4G NGB8207BNT4G |
Ignition IGBT 20 A, 365 V, N.Channel D2PAK
|
ON Semiconductor
|
| NGD18N45CLB |
Ignition IGBT, N-Channel, 18 A, 450 V, DPAK
|
ON Semiconductor
|
| NGB15N41CLT4 NGD15N41CLT4 NGP15N41CL NGD15N41CL |
Ignition IGBT 15 Amps, 410 Volts
|
ONSEMI[ON Semiconductor]
|
| CS8312 CS8312YD8 CS8312YDR8 CS8312YN8 |
IGBT Ignition Predriver with Dynamic Current Regulation
|
Cherry Semiconductor Co...
CHERRY[Cherry Semiconductor Corporation]
ZF Electronics Corporation
|
