PART |
Description |
Maker |
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
AP1043 AP1044 AP1141 AP1057 AP1103 AP1137 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-111 Power inductor, 10/20% tol, SMT, RoHS TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 5A条一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-5
|
Electronic Theatre Controls, Inc.
|
MG100G2DL1 |
TRANSISTOR BJT POWER MODULE
|
Toshiba
|
SMA4030 |
PNP Darlington General purpose TRANSISTOR,BJT POWER MODULE,INDEPENDENT,100V V(BR)CEO,3A I(C)
|
SANKEN[Sanken electric] Allegro Microsystems Inc
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
MG50G2XXX |
BJT and MOS-BJT Power Module
|
Toshiba
|
QM50TB24 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1.2KV五(巴西)总裁| 50A条一(c
|
Mitsubishi Electric, Corp.
|
ESM2030DF |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 300V V(BR)CEO | 67A I(C) 晶体管|晶体管电源模块|达林顿| 300V五(巴西)总裁|67A一(c
|
Electronic Theatre Controls, Inc.
|
QM15TB2HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五(巴西)总裁|5A一(c
|
NXP Semiconductors N.V.
|
QM30E3Y-H |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块|达林顿| 600V的五(巴西)总裁| 30A条一(c
|
Mitsubishi Electric, Corp.
|