| PART |
Description |
Maker |
| 6N40 6N40L-TF3-T 6N40G-TF3-T |
6 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTP10N40-D |
Power MOSFET 10 Amps, 400 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
| NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD2 |
Power MOSFET 23A, 25V, N-Channel DPAK
23 Amps / 25 Volts / N-Channel DPAK
23 Amps, 25 Volts, N−Channel DPAK
23 Amps, 25 Volts, N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NGB8204ANT4G NGB8204N11 |
Ignition IGBT 18 Amps, 400 Volts
|
ON Semiconductor
|
| NGB8204NT4 NGB8204NT4G NGB8204N |
Ignition IGBT 18 Amps, 400 Volts
|
ONSEMI[ON Semiconductor]
|
| 2N2323 2N2322 2N2324 2N2325 2N2326 |
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
|
Central Semiconductor Corp
Central Semiconductor C...
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| SFS2540 SFS2510 SFS2520 SFS2525 SFS2530 |
25 AMPS 100 ─ 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
25 AMPS 100 Α 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD6628SMS SPD6627 SPD6627SMS |
4 AMPS, 400 thru 600 VOLTS 30 nsec HYPER FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SFA60PME SFA40PME SFA50PME |
68 AMPS 400 - 600 VOLTS 40 nsec HYPER FAST PDSITIVE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V，双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
| SDA67612S SDA67612TX SDA67612TXV SDA67612 SDA67636 |
0.125 to 0.400 AMPS, 1,200 to 5,000 VOLTS STANDARD RECOVERY SINGLE PHASE BRIDGE RECTIFIER
|
Solid States Devices, Inc
|
