| PART |
Description |
Maker |
| P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45 |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| P4C1298-45JMB P4C1298-45PMB P4C1298-45JC P4C1298-4 |
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 64K X 4 STANDARD SRAM, 15 ns, CDIP28
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 超高4K的4静态CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IS61LV6416 |
64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS静态RAM) 64K的16高速CMOS静态RAM.3伏，64K的16高速的CMOS静态RAM）的
|
Integrated Silicon Solution, Inc.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W26L010A W26L010A-10 W26L010A-12 W26L010AJ-10 W26L |
JT 10C 10#20 PIN RECP
From old datasheet system
64K X 16 High Speed CMOS Static RAM
HIGH SPEED SRAM 64Kx16
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
| IS61WV6416BLL IS61WV6416BLL-12TLI IS64WV6416BLL IS |
64K x 16 HIGH-SPEED CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS64LV6416L-12TA3 IS64LV6416L-10TA1 IS64LV6416L-12 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
|
Integrated Silicon Solution, Inc.
|
| W25P222A W25P222A-4 W25P222A-4A W25P222AD-4 W25P22 |
64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| KM6161002C KM6161002C-12 KM6161002C-15 KM6161002C- |
CMOS SRAM
64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| P4C116-12JM P4C116-10JM P4C116-10JMB P4C116-20L28M |
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 超高K × 8静态CMOS五羊
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, PDFP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, QCC32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system
Dual N-Channel Digital FET
30V N-Channel PowerTrench MOSFET
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
