PART |
Description |
Maker |
2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] http://
|
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
FJX597JH FJX597JHTF |
Si N-channel Junction FET Capacitor Microphone Applications Silicon N-Channel Junction FET
|
FAIRCHILD[Fairchild Semiconductor]
|
2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|