| PART |
Description |
Maker |
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
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NTE[NTE Electronics]
|
| 2SC3439 |
High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) Small package for mounting.
|
TY Semiconductor Co., Ltd
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
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|
| X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 |
RTC Module With CPU Supervisor 时钟模块CPU监控
DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode
MODULE DROP IN FOR XE1203 868MHZ
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB
THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
|
Intersil, Corp.
XICOR[Xicor Inc.]
|
| FFM1200W FFM1800W FFM1600W FFM1500W FFM1400W FFM10 |
0.5 A, 1800 V, SILICON, SIGNAL DIODE
0.5 A, 1500 V, SILICON, SIGNAL DIODE
FAST RECOVERY RECTIFIER VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere
|
RECTRON LTD
Rectron Semiconductor
|
| HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler
3 dB 90° Card Couplers
3 dB 90∑ Card Couplers
3 dB 90 Card Couplers
SCR-600VRM 10A
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole
3 dB 90Card Couplers 3分贝90Σ卡耦合
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合
3 dB 90??Card Couplers
3 dB 90?Card Couplers
|
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
HIROSE[Hirose Electric]
|
| GP151 |
1.5A Iout, 50V Vrrm General Purpose Silicon Rectifier
|
Max Lion Electronics, Inc.
|
| MR830 MR836 MR832 MR834 |
(MR830 - MR836) 600V Vrrm Fast Recovery Rectifier
|
Motorola
|
| 1N3888JAN |
12A Iout, 400V Vrrm Fast Recovery Rectifier
|
Defense Electronics Supply Center
|
| AM2018-33GI068 AM2018-100JC068 AM2018-20/BTC AM201 |
FPGA, 100 CLBS, 1800 GATES, 33 MHz, CPGA68
FPGA, 100 CLBS, 1800 GATES, 100 MHz, PQCC68
FPGA, 100 CLBS, 1800 GATES, 20 MHz, CPGA84
FPGA, 100 CLBS, 1800 GATES, 33 MHz, CPGA84
FPGA, 64 CLBS, 1200 GATES, 100 MHz, PDIP48
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ADVANCED MICRO DEVICES INC
|
| PTVS13VS1UR PTVS10VS1UR-115 TVS51VS1UR PTVS7V0S1UR |
400 W Transient Voltage Suppressor 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
NXP Semiconductors N.V.
|
| RA30H4047M RA30H4047M-01 RA30H4047M-E01 |
400-470MHz 30W 12.5V MOBILE RADIO 400 - 470MHz的功0W 12.5V移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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