PART |
Description |
Maker |
W9864G2IH |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC 4 Banks X 8M X 8Bit Synchronous DRAM SDRAM - 256Mb
|
Hynix Semiconductor
|
MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM 128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
W946432AD W946432A |
SDRAM 2Mx32 512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|
W986432DH |
SDRAM 2Mx32 512K ′ 4 BANKS ′ 32 BITS SDRAM
|
Winbond Electronics
|
W981616BH |
SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
50S116T |
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE[Ceramate Technical]
|
K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S28 |
IC REG ULDO DUAL 2.8/1.5V 6-MLF 8Mx16 SDRAM 54CSP 2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IS46LR32640A |
16M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp. Winbond Electronics Corp
|