| PART |
Description |
Maker |
| ZABG4002 ZABG4002JA16TC |
LOW POWER 4 STAGE FET LNA BIAS CONTROLLER
|
Diodes Incorporated
|
| AN11006 |
Single stage 2.3_2.7GHz LNA with BFU730F
|
NXP Semiconductors
|
| MGF0907B MGF0907B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0917A MGF0917A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0921A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0905A MGF0905A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MC13142D |
LOW POWER DC - 1.8 GHz LNA, MIXER and VCO
LOW POWER DC - 1.8 GHz LNA MIXER and VCO
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| 2SA562TM E000596 |
From old datasheet system
AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
|
ETC
Toshiba Semiconductor
|
| 2SC2859 E000767 |
TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
|
Toshiba Semiconductor
Sanyo Semicon Device
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
