| PART |
Description |
Maker |
| DL-3180-121 |
Laser Diode, 5mW Power, 805nm Wave Length, 20mA Current
|
Sanyo Semiconductor
|
| DL-4038-021 |
Red Laser Diode High Power AlGaInP Laser Diode
|
SANYO
|
| OL5201N-25 OL5201N_25_5204N_25 OL5204N-25 |
PT 3C 3#20 SKT RECP
1.55 m High-Power Laser-Diode DIP Module
From old datasheet system
1.55 um High-Power Laser-Diode DIP Module
1.55 レm High-Power Laser-Diode DIP Module
1.55 μm High-Power Laser-Diode DIP Module
|
OKI electronic components
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| OL595N-P20 OL595N-20 OL595N-40 OL595N-60 OL595N_20 |
1.55 μm High-Power Laser-Diode Coaxial Module
1.55 レm High-Power Laser-Diode Coaxial Module
From old datasheet system
1.55 m High-Power Laser-Diode Coaxial Module
1.55 ?? High-Power Laser-Diode Coaxial Module
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
