| PART |
Description |
Maker |
| H57V1262GFR |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| H57V1262GFR-50X H57V1262GFR-60X H57V1262GFR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM48AM3244VBA-6FE EM488M3244VBA-6FE EM488M3244VBA- |
128Mb (1M×4Bank×32) Synchronous DRAM
128Mb (1M?4Bank?32) Synchronous DRAM
128Mb (1M】4Bank】32) Synchronous DRAM
|
http://
Eorex Corporation
|
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| NT128S64VH8C0GM-75B NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| H57V2582GTR-60I H57V2582GTR-60J H57V2582GTR-75I H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| H57V2562GFR-60C H57V2562GFR-60L H57V2562GFR-75C H5 |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| H57V2562GTR |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
