| PART |
Description |
Maker |
| 28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
CONNECTOR ACCESSORY
POT 100K OHM THUMBWHEEL CERM ST
|
http://
NXP Semiconductors N.V.
Maxwell Technologies, Inc
|
| S29GL032A100BFIR10 S29GL032A100TFIR10 S29GL032A100 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 64兆，32兆和16兆位3.0伏只页面模式闪存，含00纳米MirrorBit工艺技
|
Spansion Inc.
Spansion, Inc.
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM
From old datasheet system
1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| S29GL032A10FFIR22 S29GL032A10TFIR32 S29GL032A10TFI |
Up-to-200kHz Multi-topology PWM Voltage-Mode Controller - PB Free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500
Up-to-200kHz Multi-topology PWM Voltage-Mode Controller - PB Free; Package: PDIP-14; No of Pins: 14; Container: Rail; Qty per Container: 500
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
3-36V Quad Channel Operational Amplifier, Ta = -40 to 85°C - Pb-free; Package: PDIP-14; No of Pins: 14; Container: Rail; Qty per Container: 500 64兆位32MEGABIT 3.0螺栓只页面模式闪
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 110 ns, PDSO48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 64兆位32MEGABIT 3.0螺栓只页面模式闪
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 110 ns, PBGA64
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
Up-to-100kHz Multi-topology Burst-Mode Voltage-Mode Controller with 40V / 1.5A Switch; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
1.5A Step-Up/Step-Down/Inv Regulator with 40V / 1.5A Switch (Ext Temp); Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
1.5A Step-Up/Step-Down/Inv Regulator with 40V / 1.5A Switch (Ext Temp); Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
3-36V Quad Channel Operational Amplifier, Ta = -40 to 85°C; Package: PDIP-14; No of Pins: 14; Container: Rail; Qty per Container: 500
|
SPANSION LLC
Spansion, Inc.
Spansion Inc.
|
| AT49BV6416 AT49BV6416-70TI AT49BV6416T-70TI AT49BV |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
ATMEL[ATMEL Corporation]
|
| AM70PDL129BDH |
(AM70PDL127BDH / AM70PDL129BDH) 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory
|
AMD
|
| S29GL064M90TAIR12 S29GL064M90TAIR40 S29GL064M90TAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
|
SPANSION[SPANSION]
|
| S29GL032M10BBIR20 S29GL032M10FBIR20 S29GL032M10TBI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology
|
SPANSION
|
