PART |
Description |
Maker |
IDT7MP4031B15Z IDT7MP4031B10Z |
x32 SRAM Module
|
|
CYM1841APZ-55C CYM1841P7-20C CYM1841PM-30C |
x32 SRAM Module X32号的SRAM模块
|
L-com, Inc.
|
CYM1838LHG-30C CYM1838LHG-25MB CYM1838LHG-35MB CYM |
x32 SRAM Module X32号的SRAM模块
|
Samsung Semiconductor Co., Ltd.
|
DPS512X32MFJ3-35C DPS512X32MFJ3-25C DPS512X32MFJ3- |
x32 SRAM Module X32号的SRAM模块
|
HIROSE ELECTRIC Co., Ltd. JAE Electronics, Inc. Citizen Finetech Miyota Alpha Wire Company Abracon, Corp.
|
DPS6434-45I DPS6434-45C DPS6434-45B DPS6434-45M DP |
x32 SRAM Module X32号的SRAM模块
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
I282485MA-33 I282485MB-33 I282485MA-25 |
x32 SRAM Module X32号的SRAM模块
|
Glenair, Inc.
|
5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 59 |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Technology
|
IDT71V433S11PFI |
x32 Fast Synchronous SRAM 32K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
CY7C1049L-25VM |
25ns, 512Kx8 static RAM (SRAM)
|
Cypress
|
WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP |
512K x 8 SRAM, 15ns 512K x 8 SRAM, 17ns 512K x 8 SRAM, 20ns 512K x 8 SRAM, 25ns
|
White Electronic Designs
|
EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时57055555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时57205555ns 128Kx32 SRAM的模块(低功耗的CMOS28Kx32静态内存模块(存取时间15,17,20,25,35,45,55纳秒)) 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation TE Connectivity, Ltd.
|
GS820E32AQ-5I GS820E32AT-5I GS820E32AT/Q-150/138/1 |
64K x 32 2M Synchronous Burst SRAM x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Electronic Theatre Controls, Inc. Aeroflex, Inc.
|