| PART |
Description |
Maker |
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| THC63LVDF64B THC63LVDF84B |
LVDS 24Bit/18Bit COLOR HOST-LCD PANEL INTERFACE RECEIVER LVDS24Bit/18Bit彩色主机- LCD面板接口接收
|
THine Electronics, Inc.
|
| CY7C1219F-133AC CY7C1219F |
1-Mb (32K x 36) Pipelined DCD Sync SRAM
1-Mbit (32K x 36) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1484V33 CY7C1484V33-167AC CY7C1484V33-167BGC C |
2M x 36/4M x 18 Pipelined DCD SRAM
|
CYPRESS[Cypress Semiconductor]
|
| GS840H18 GS840H32B-180T GS840H32B-180I |
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
128K X 32 CACHE SRAM, 8 ns, PBGA119
|
GSI Technology
|
| GS8170S18 |
16MbM x 18Bit）Synchronous SRAM(16M位（1M x 18位）同步静态RAM) 16Mb的（100x 18位）同步SRAM,600位（100万18位）同步静态内存）
|
GSI Technology, Inc.
|
| CY7C1387B-150BZC CY7C1387B-133BGC CY7C1387B-133BZC |
512K x 36/1M x 18 Pipelined DCD SRAM
|
http://
|
| CY7C1485V33-167AXC CY7C1485V33-167AXI CY7C1485V33- |
72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1484BV33-250BZXC |
72-Mbit (2 M 36) Pipelined DCD Sync SRAM
|
Cypress
|
| GS864418E-200IV GS864418E-200V GS864418E-133IV GS8 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
