| PART |
Description |
Maker |
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| UPD29F800ALGZ-C15B-MJH UPD29F800ALGZ-C15T-MJH UPD2 |
XWAY™ TANTOS
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information | Information[10/2002]
EEPROM|FLASH|512KX16/1MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | TSSOP封装| 48PIN |塑料
|
NEC, Corp.
3M Company
|
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
Samsung semiconductor
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| IS45S16800B IS45S16800B-7TA IS45S16800B-7TA1 IS45S |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| EM39LV80090Y EM39LV800 EM39LV80055RD EM39LV80055RH |
8M Bits (512Kx16) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
| HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| IS61LV5121 |
512Kx16 High Speed Asynchronous CMOS Static RAM With 3.3V Supply
|
ISSI
|
| 1N4007 1N4004 1N4022 1N4003 |
IC, 8MBIT FLASH, 1MX8/512KX16, 3.3V, TSOP48
1.0 Ampere General Purpose Rectifiers
|
Fairchild Semiconductor Corporation
|
| N08M163WL1AD-70I N08M163WL1A N08M163WL1AB N08M163W |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
