| PART |
Description |
Maker |
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| IRLC1304 2299 |
HEXFET Power MOSFET Die in Wafer Form(晶圆形式的HEXFET 功率MOS场效应管)
From old datasheet system
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IXFK44N50F IXFX44N50F |
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
FILM/M CAPACITANCE=4.7 VOLT=100
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
|
IXYS, Corp.
ETC[ETC]
IXYS[IXYS Corporation]
|
| 5SLX12M3301 |
Fast-Diode Die
|
The ABB Group
|
| MSAGA11F120D |
Fast IGBT Die for Implantable Cardio Defibrillator Applications
|
Microsemi Corporation
|
| IRFC240 |
HEXFET Power MOSFET Die
|
International Rectifier
|
| IXFN36N100 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
ETC[ETC]
|
| S2305 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRFP2907B IRFC2907B |
HEXFET Power MOSFET Die in Wafer Form
|
International Rectifier
|
