| PART |
Description |
Maker |
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 5962-0420401HPC 5962-0420401HYC 5962-0420401HYA HC |
2.0 Amp Output Current IGBT Gate Drive Optocoupler 2.0安培输出电流IGBT栅极驱动光电耦合
5962-0420401HPC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HPA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HXA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HIROSE ELECTRIC Co., Ltd.
DB Lectro, Inc.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| DA2318-ALD |
Transformer, gate drive, SMT, RoHS PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
Coilcraft, Inc.
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| GA3550-BL GA3550-BLB |
Gate Drive Transformer
PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
Coilcraft lnc.
COILCRAFT INC
|
| GT02 GT02-111-006 |
Gate Drive Transformer PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
ice Components, Ins.
ICE Components, Inc.
|
| AP2535GEY-HF AP2535GEY-HF-14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| GCU08AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| HCPL-J314 HCPL-J314-300 HCPL-J314-500 HCPL-J314-XX |
0.4 Amp Output Current IGBT Gate Drive Optocoupler 0.4安培输出电流IGBT栅极驱动光电耦合
DB25 F/F NULL MODEM ADAPT SCA-
HCPL-J314 · 0.4 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| AP4434GH-HF AP4434GH-HF-14 |
Lower Gate Charge, Capable of 2.5V Gate Drive
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| 74ABT02PWDH 74ABT02 74ABT02D 74ABT02DB 74ABT02N 74 |
Quad 2-input NOR gate ABT SERIES, QUAD 2-INPUT NOR GATE, PDSO14
Quad 2-input NOR gate - Description: Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.4 ns; Voltage: 4.5-5.5 V ABT SERIES, QUAD 2-INPUT NOR GATE, PDSO14
|
Atmel, Corp.
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
