| PART |
Description |
Maker |
| DSCELSIUSH210 |
CELSIUS H210 Workstation power in notebook format
|
Fujitsu Microelectronics
Fujitsu Component Limited.
|
| DS_CELSIUS_H210 |
CELSIUS H210 Workstation power in notebook format
|
FUJITSU[Fujitsu Media Devices Limited]
|
| SUM70N04-07L-E3 SUM70N04-07L08 |
N-Channel 40-V (D-S) 175 Celsius MOSFET
|
Vishay Siliconix
|
| SQJ500EP-T1-GE3 |
Automotive N- and P-Channel 40 V (D-S) 175 Celsius MOSFET
|
Vishay Siliconix
|
| SQM18N33-160H SQM18N33-160H-GE3 |
N-Channel 330 V (D-S) 175 Celsius MOSFET
|
Vishay Siliconix
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| POWER-32D POWER-22D POWER-12D |
(POWER-12D/-22D/-32D) Low power off-line switching power supply control chip
|
Xin Ke
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| TB2959HQ |
Maximum Power 47W BTL 4-ch Audio Power IC
Power amplifier ICs
|
Toshiba Semiconductor
|
