| PART |
Description |
Maker |
| HYB39L128160AC-7.5 HYB39L128160AT-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
|
Infineon
|
| HYB39D128323C-4.5 HYB25D128323C-3.0 HYB25D128323C- |
Specialty DRAMs - 333MHz (4Mx 32)
Specialty DRAMs - 300MHz (4M x 32)
Specialty DRAMs - 275MHz (4M x 32) Low power
Specialty DRAMs - 222MHz (4M x 32) Low power
|
Infineon
|
| HYB25D256161CE-4.0 HYB25D256161CE-5.0 |
Specialty DRAMs - 250MHz (16Mx16)
Specialty DRAMs - 200MHz (16Mx16)
|
Infineon
|
| HYB25L512160AC-7.5 HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| HYE18P32160AC-15 |
Specialty DRAMs - 2Mx16, VFBGA-54; Available 2Q04
|
Infineon
|
| M464S0924BT1 M464S1724BT1SDRAMSODIMM |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM
SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
