PART |
Description |
Maker |
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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http:// Intel, Corp. PROM Intel Corp. Intel Corporation
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28F004BX-B 28F400BX-B E28F400BX-B80 28F004BX-T E28 |
4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16 / 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
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Intel
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SST39LF010-90-4I-NH SST39VF020-70-4C-NK SST39LF010 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash Hexadecimal and Numeric DIsplays for Industrial Applications SMT TAPE AND REEL RELAY Replaced by PT78ST212 : 12Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 EN60950 Relay Replaced by PT6302 : 5Vout 3Amp Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 70 LED Light Bars 7.62 mm (0.3 inch) Single Digit General Purpose Seven Segment Display PCB Relay; Contacts:DPDT; Contact Carry Current:2A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Coil Resistance:125ohm; Coil Power VDC:200mW; Relay Mounting:PC Board RoHS Compliant: Yes 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 10 mm (0.4 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 10.9 mm (0.43 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 10-Element Bar Graph Array 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 Replaced by PT78ST165 : 6.5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 Replaced by PT78HT205 : 5Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PBGA48 Replaced by PT78HT233 : 3.3VOUT 2A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE -40 TO 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PBGA48 Replaced by PT6213 : 3.45Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 128K X 8 FLASH 2.7V PROM, 90 ns, UUC 64K X 8 FLASH 2.7V PROM, 90 ns, UUC
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Silicon Storage Technology, Inc. Silicon Storage Technology Inc Cinch Connectors Microchip Technology, Inc. SILICON STORAGE TECHNOLOGY INC Silicon Storage Technol...
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M36W432TG70ZA1T M36W432TG85ZA6T M36W432TG-ZAT M36W |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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意法半导
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CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27 |
Series One Watt Zeners 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs Serial access Real-Time Clock with alarm
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1N4728A STMICROELECTRONICS[STMicroelectronics]
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M36DR432C M36DR432CA10ZA6T M36DR432CA85ZA6T M36DR4 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽,双行,页闪存和4兆位256K x16的SRAM,多个存储产
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意法半导 STMicroelectronics N.V.
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CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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