PART |
Description |
Maker |
ALC662 |
5.1-Channel High Defintion Audio Codec
|
Realtek
|
BC807-16-7 BC807-25-7 BC807-40-7 BC807 BC807-40 BC |
PNP SURFACE MOUNT TRANSISTOR SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO, BusTrace, AUD BP-112; Vcc= 3.0 to 5.5 volts, Temp= -20 to 85 C; Package: PLBG0112GA-A
|
http:// DIODES[Diodes Incorporated] Diodes Inc.
|
2SK2038 K2038 |
2SK2038 N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR From old datasheet system N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型(高速,高电流开关应用)
|
Toshiba. TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流,高电压,1000V , 10A,N沟道,MOS场效应管(高能容量)) 高电流,高电000V0安培N沟道,MOSFET的高能能力(大电流,高电压,1000V0A条,沟道来说,MOS场效应管(高能容量) HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) 500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS) SILICON N CHANNEL JUNCTION TYPE From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流,高电压,500V , 58A,N沟道,MOS场效应管) POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE 100V Single N-Channel Hi-Rel MOSFET in a PB-3A package 500V Single N-Channel Hi-Rel MOSFET in a PB-3A package 600V Single N-Channel Hi-Rel MOSFET in a PB-3A package 200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers International Rectifier ETC[ETC]
|
2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型(高速,大电流开关,斩波调压器,DC - DC变换器和电机驱动应用 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS From old datasheet system
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|