| PART |
Description |
Maker |
| AM83135-010 2710 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| MS2604 |
RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd.
|
| AM1214-200 |
L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AM81214-030 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLL6H1214LS-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor
|
Philips Semiconductors
|
| BLS6G2731P-200 |
LDMOS S-Band radar pallet amplifier
|
NXP Semiconductors N.V.
|
