PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc. ONSEMI[ON Semiconductor]
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
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TOSHIBA[Toshiba Semiconductor]
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
|
BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204 SWITCHMODE Series NPN Silicon Power Transistor SWITCHMODE Series NPN Silicon Power Transistor SITCHMODE Series NPN Silicon Power Transistor
|
ONSEMI[ON Semiconductor]
|
2SA1463-T2 2SA1463-T1 2SA1463 |
Silicon transistor HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
CENU05 CENU06 CENU57 CENU07 CEN-U07 CENU55 CENU56 |
SILICON COMPLEMENTARY POWER TRANSISTORS 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-202 Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
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2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS 3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
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