| PART |
Description |
Maker |
| AN-264 |
Dynamic Characteristics of Tracking Converters
|
Analog Devices
|
| EP3C25F256I7N EP3C25Q240C8N EP3C10E144C7 EP3C10F25 |
1. Cyclone III Device Datasheet
The following sections provide information about the absolute maximum ratings, recommended operating conditions, DC characteristics, and other specifications for Cyclone IIIdevices
This chapterdescribes the electric characteristics, switching characteristics,and I/O timing for Cyclone III devices. A glossary is also included for your reference
This chapter describes the electric characteristics, switching characteristics, and I/O timing for Cyclone? III devices. A glossary is also included for your reference.
|
Altera Corporation
|
| 178216-5 |
Dynamic Series Connectors; DYNAMIC 3400 HDR H 12P ASSY ( AMP )
|
Tyco Electronics
|
| 9-917541-2 |
Dynamic Series Connectors; DYNAMIC D-5200S H-HDR ASSY 4P ( AMP )
|
Tyco Electronics
|
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| XC3S200A-4VQG100C TQG144 XC3S50A XC3S200A-4FTG256C |
Architectural and Configuration Overview
Spartan-3A FPGA Family
DC Electrical Characteristics
DC and Switching Characteristics
|
Xilinx, Inc
|
| IC42S32200/L-6B IC42S32200/L-6BG IC42S32200/L-6BI |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
DYNAMIC RAM, SDRAM
|
Integrated Circuit Systems
ICSI
|
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http://
SIEMENS A G
SIEMENS AG
|
| IS41LV8512 IS41C8512 41C8512 IS41C8512-35K IS41C85 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
From old datasheet system
DYNAMIC RAM, EDO DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS42S16100A1 IS42S16100 IS42S16100-7T IS42S16100-1 |
512K WORDS X 16 BITS X 2 BANKS (16-MBIT) SYNCHRONOUS DYNAMIC RAM
16mb Synchronous Dynamic RAM: 512kx16x2
|
Integrated Silicon Solution, Inc
ISSI
|
