PART |
Description |
Maker |
EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM(存取时0500ns
|
White Electronic Designs Corporation
|
EDI8L32256V15AI EDI8L32256V12AC EDI8L32256V15AC ED |
15ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM 12ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM 17ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
|
White Electronic Designs
|
EDI8L32256C15AC EDI8L32256C17AC EDI8L32256C17AI |
15ns; 5V power supply; 256K x 32; 8 megabit SRAM 17ns; 5V power supply; 256K x 32; 8 megabit SRAM
|
White Electronic Designs
|
AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器) 4分(12k × 8/256K × 16)位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
71V416S15PHG IDT71V416L IDT71V416S |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
|
Integrated Device Technology
|
T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog... TMT[Taiwan Memory Technology] TM Technology, Inc.
|
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|
BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS EEPROM (4kx8) 32K 2.5-6.0 EEPROM (4kx8) 32K 1.8-6.0 EEPROM (1024x8) 8K EEPROM 256K X 8 200ns EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C EEPROM (256x8) 2K 1.8-6.0 EEPROM (512x8) 4k 1.8-6.0 EEPROM 128K X 8 150ns EEPROM (8kx8) 64K 1.8-6.0 EEPROM (2048x8)(1024x16)16K EEPROM U 804-29EE0107CWH EEPROM 64K X 8 70ns EEPROM (256x8) 2K 2.5-6.0 EEPROM (8kx8) 64K 2.5-6.0 SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP EEPROM (384x8) 128k 16 EEPROM SPI 1KBIT EEPROM SPI 4096X8 BIT EEPROM SRL 64X16 BIT EEPROM (256x8) (128x16) 2K 8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC EEPROM (128x8) 1k 2.5-6.0 EEPROM (8kx8) 64K 5V 90ns EEPROM (32kx8) 256K 5V 150 EEPROM (32kx8) 256K 5V 120 EEPROM 2kb 1.7-5.5V Ind I2C EEPROM 512K-Bit CMOS PARA EEPROM EEPROM (32kx8) 256K 3V 250 EEPROM 64K X 8 512K 5V 150 EEPROM 256K (32KX8)
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Omron Electronics, LLC Atmel, Corp. MITSUMI ELECTRIC CO., LTD. Intersil, Corp. Cypress Semiconductor, Corp. TE Connectivity, Ltd. Silicon Storage Technology, Inc. BCD Semiconductor Manufacturing, Ltd. Belden, Inc. Rohm Co., Ltd. Bourns, Inc. NXP Semiconductors N.V. Lattice Semiconductor, Corp. Rectron Semiconductor SIEMENS AG Maxim Integrated Products, Inc. Rochester Electronics, LLC RF Solutions, Ltd. Fujitsu, Ltd.
|
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
IS62LV2568LL-100H |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 256K × 8低功耗和低成本吓的CMOS静态RAM
|
Integrated Silicon Solution, Inc.
|