PART |
Description |
Maker |
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32 128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32 131072-word x 8-bit High Speed CMOS Static RAM 131072-word x 8-bit High Speed CMOS Static RAM
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Cypress Semiconductor, Corp. SONY
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KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM 128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. From old datasheet system
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http:// SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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TC55V8128BFT-8 TC55V8128BJ-8 |
128K Word x 8 Bit CMOS Static RAM(128K字x 8 CMOS 静RAM)
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Toshiba Corporation
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MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100 Replaced by PTH12000W :
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MOTOROLA INC NEC, Corp. Motorola Mobility Holdings, Inc. Motorola, Inc.
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M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32 1048576-bit (131072-word by 8-bit) CMOS static SRAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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KM681000CLTI-7L KM681000CL KM681000CL-L KM681000CL |
128K x8 bit Low Power CMOS Static RAM
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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TC55V4336FF-100 |
128K Word x 32 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?32浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128K x 8 Ultra Low Power and Low VCC SRAM From old datasheet system 55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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UPD441000L-X UPD441000LGU-B10X-9JH UPD441000LGU-B8 |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
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NEC Corp. NEC[NEC]
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IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
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Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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