| PART |
Description |
Maker |
| NESG260234 NESG260234-T1 |
3-PIN POWER MINIMOLD
|
NEC[NEC]
|
| NESG260234 |
3-PIN POWER MINIMOLD 3 - Pin电源MINIMOLD
|
NEC, Corp.
|
| NESG270034-T1 NESG270034-AZ NESG270034-T1-AZ NESG2 |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
|
CEL[California Eastern Labs]
|
| 2SC4703-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
California Eastern Labs
|
| 2SC5752 2SC5752-T1 2SC5752NE67818 |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
|
NEC
|
| UPA880TS-T3 UPA880TS |
NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)
|
NEC Corp.
NEC[NEC]
|
| UPA863TD-A UPA863TD-T3-A |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD
|
California Eastern Labs
|
| 2SC4093-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC4227-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC5606 2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
|
NEC
|
| 2SC4703 2SC4703-T1 2SC4703-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
