PART |
Description |
Maker |
R29771 R29683 |
Standard 4096 x 8 Bit PROM(标准096 x 8 PROM) Standard 2048 x 8 Bit PROM(标准048 x 8 PROM) 标准048 × 8位可编程(标准的2048 × 8位可编程
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Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
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Spansion, Inc. SPANSION LLC
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M3-7603-5 HM3-7603 |
(HM3-7602) 32 x 8 PROM 32 X 8 PROM(Open Collector Outputs, Three State Outpus)
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HARRIS[Harris Corporation]
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AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
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CY7C261 CY7C264 CY7C263 |
8K x 8 Power-Switched and Reprogrammable PROM(8K x 8功率转换可重复编程的PROM) 8K x 8 Power-Switched and Reprogrammable PROM(8K x 8功率转换可重复编程的 PROM) 8K的8电源开关和可重编程胎膜早破K的8功率转换和可重复编程的可编程
|
Cypress Semiconductor Corp.
|
MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57 TVS BIDIRECT 600W 33V SMB 32M的(4米8/2M × 16)位双操 32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57 32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT) From old datasheet system 1M-BIT MASK ROM(8 BIT OUTPUT) MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出) 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
|
MCNIX[Macronix International] Macronix 旺宏 Macronix International Co., Ltd. Altera, Corp.
|
CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 x8 Flash EEPROM x8闪存EEPROM 1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics Atmel, Corp. Rectron Semiconductor http://
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E28F008S5-90 PA28F008S5-90 |
1M X 8 FLASH 5V PROM, 90 ns, PDSO40 10 X 20 MM, TSOP-40 1M X 8 FLASH 5V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
|
Intel, Corp. Numonyx Asia Pacific Pte, Ltd.
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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HS1-6664RH/PROTO HS9-6664RH/PROTO HS-6664RH00 5962 |
8K x 8 CMOS PROM; Temperature Range: -; Package: 28-FlatPack 8K X 8 OTPROM, CDFP28 8K x 8 CMOS PROM; Temperature Range: -; Package: 28-SBDIP 8K X 8 OTPROM, CDIP28 Radiation Hardened 8K x 8 CMOS PROM
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Intersil, Corp. Intersil Corporation
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