| PART |
Description |
Maker |
| BD95514MUV |
FET Integrated Switching Regulator for DDR-SDRAM Cores
|
Rohm
|
| 2SJ196 2SJ196-T 2SJ196-T/JD 2SJ196-T/JM 2SJ195FA |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 4A条（丁）|52VAR
P-CHANNEL MOS FET FOR SWITCHING
|
Sanyo Electric Co., Ltd.
NEC[NEC]
|
| 2SJ324 2SJ324-Z-T1 2SJ324-Z-E2 2SJ324-Z-T2 2SJ324- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
|
| 2SK823 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp.
NEC[NEC]
|
| ISL6611A ISL6611ACRZ ISL6611AIRZ ISL6611AIRZ-T |
Phase Doubler with Integrated Drivers and Phase Shedding Function; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R DUAL SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PQCC16
Phase Doubler with Integrated Drivers Phase Doubler with Integrated Drivers
|
Intersil, Corp.
Intersil Corporation
|
| RJE0616JSP RJE0616JSP-00-J3 RJE0616JSP-15 |
Silicon P Channel MOS FET Series Power Switching
-60V, -4A Silicon P Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| FS5ASJ-06F FS5ASJ-06F-T13 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| H7N0312LM H7N0312LS H7N0312LD |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
| H5N2519P H5N2519P-E |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N3003P H5N3003 |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
