| PART |
Description |
Maker |
| M59DR008F |
8 MBIT (512KB X16, DUAL BANK, PAGE) LOW VOLTAGE FLASH MEMORY
|
ST Microelectronics
|
| M59DR008 M59DR008E M59DR008E100N1T M59DR008E100N6T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M59DR032A M59DR032A100N1T M59DR032A100N6T M59DR032 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M459E16VMP6G M459E16VMP6P M459E16VMP6TG M459E16VMP |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
STMicroelectronics
|
| M45PE40-V M45PE40-VMF6G M45PE40-VMF6P M45PE40-VMF6 |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M45PE10-VMN6 M45PE10-VMN6G M45PE10-VMN6T M45PE10-V |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M25PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE10-VMN6G M25PE10-VMP6G M25PE10-VMP6P M25PE10- |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M27W202 M27W202-100B6TR M27W202-100F6TR M27W202-10 |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
3-Line To 8-Line Decoders/Demultiplexers 16-SOIC 0 to 70
Triple 3-Input Positive-AND Gates 14-SO 0 to 70
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
