| PART |
Description |
Maker |
| PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
120NS, SOIC, IND TEMP(EEPROM)
70NS, PDIP, IND TEMP(EEPROM)
120NS, TSOP, COM TEMP(EEPROM)
200NS, PLCC, COM TEMP(EEPROM)
DIE(EEPROM)
90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PLCC, IND TEMP(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Lattice Semiconductor, Corp.
Amphenol, Corp.
|
| DPZ512X16IH3-17M DPZ512X16IH3-17I DPZ512X16IH3-17B |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
TT electronics Semelab, Ltd.
Micro Commercial Components, Corp.
|
| W49F102Q-45 W49F102P-45 |
EEPROM|FLASH|64KX16|CMOS|TSSOP|40PIN|PLASTIC
EEPROM|FLASH|64KX16|CMOS|LDCC|44PIN|PLASTIC
64K X 16 FLASH 5V PROM, 45 ns, PDSO40
|
WINBOND ELECTRONICS CORP
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| MX29F004BQC-70 MX29F004BQC-12 MX29F004BQC-90 MX29F |
x8 Flash EEPROM
4M-BIT [512KX8] CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| E28F002BX-T70 PA28F200BX-T70 E28F002BX-B70 PA28F20 |
x8/x16 Flash EEPROM
x8 Flash EEPROM x8闪存EEPROM
|
Intel, Corp.
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| STM8L152R6 STM8L152M8T6 STM8L152C8 STM8L152C8T6 ST |
8-bit ultralow power MCU, up to 64 KB Flash 2 KB data EEPROM
8-bit ultralow power MCU, up to 64 KB Flash 2 KB data EEPROM, RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators
8-bit ultralow power MCU, up to 64 KB Flash 2 KB data EEPROM
|
STMicroelectronics
|
| ACT-F1288N-060P7Q ACT-F1288N-060P4T ACT-F1288N-060 |
EEPROM EEPROM
Cable Gland (Clamp); Connector Shell Size:24; Leaded Process Compatible:No; Length:2.56"; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 行为F128K8高兆位闪存单片
128K X 8 FLASH 5V PROM MODULE, 60 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32
128K X 8 FLASH 5V PROM MODULE, 70 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32
128K X 8 FLASH 5V PROM MODULE, 60 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32
128K X 8 FLASH 5V PROM MODULE, 70 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH 行为F128K8高兆位闪存单片
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH 行为F128K8高1兆位闪存单片
Retriggerable monostable multivibrator 14-PDIP 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70
Retriggerable monostable multivibrator 14-SOIC 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
D21 - BACKSHELL ENVIRON STRT MIL
D52 - BACKSHELL ENVIRON STRT MIL
CONNECTOR ACCESSORY
Retriggerable monostable multivibrator 14-SO 0 to 70
|
Aeroflex Circuit Techno...
Samsung Semiconductor Co., Ltd.
SUSUMU Co., Ltd.
Aeroflex, Inc.
Aeroflex Inc.
http://
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